JPH0566031B2 - - Google Patents

Info

Publication number
JPH0566031B2
JPH0566031B2 JP58124623A JP12462383A JPH0566031B2 JP H0566031 B2 JPH0566031 B2 JP H0566031B2 JP 58124623 A JP58124623 A JP 58124623A JP 12462383 A JP12462383 A JP 12462383A JP H0566031 B2 JPH0566031 B2 JP H0566031B2
Authority
JP
Japan
Prior art keywords
gate
semiconductor
drain
source
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58124623A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6017964A (ja
Inventor
Kazumichi Oomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58124623A priority Critical patent/JPS6017964A/ja
Publication of JPS6017964A publication Critical patent/JPS6017964A/ja
Publication of JPH0566031B2 publication Critical patent/JPH0566031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP58124623A 1983-07-11 1983-07-11 半導体装置 Granted JPS6017964A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58124623A JPS6017964A (ja) 1983-07-11 1983-07-11 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58124623A JPS6017964A (ja) 1983-07-11 1983-07-11 半導体装置

Publications (2)

Publication Number Publication Date
JPS6017964A JPS6017964A (ja) 1985-01-29
JPH0566031B2 true JPH0566031B2 (en]) 1993-09-20

Family

ID=14889998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58124623A Granted JPS6017964A (ja) 1983-07-11 1983-07-11 半導体装置

Country Status (1)

Country Link
JP (1) JPS6017964A (en])

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107861A (ja) * 1983-11-16 1985-06-13 Nippon Precision Saakitsutsu Kk Ｍｏｓ型半導体装置
JPH069245B2 (ja) * 1987-07-23 1994-02-02 工業技術院長 電界効果型半導体装置
JPH0666470B2 (ja) * 1992-01-21 1994-08-24 日本プレシジョン・サーキッツ株式会社 Ｍｉｓ型半導体装置
WO2007110940A1 (ja) * 2006-03-29 2007-10-04 Fujitsu Limited 半導体装置及びその製造方法
US10134893B2 (en) * 2017-02-22 2018-11-20 International Business Machines Corporation Fabrication of a vertical field effect transistor device with a modified vertical fin geometry

Also Published As

Publication number Publication date
JPS6017964A (ja) 1985-01-29

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